Structure of liquid crystal display device for easy assembly and disassembly

ABSTRACT

A liquid crystal display device includes a liquid crystal display panel and a metal shield casing which covers a periphery of the liquid crystal display panel. The metal shield casing has a plurality of fixing pawls and a plurality of fixing hooks.

CROSS REFERENCE TO RELATED APPLICATIONS

[0001] This is a continuation of U.S. application Ser. No. 09/761,184,filed Jan. 18, 2001, which is a continuation of U.S. application Ser.No. 09/184,012, filed Nov. 2, 1998, now U.S. Pat. No. 6,195,148, whichis a continuation application of U.S. application Ser. No. 08/884,132,filed Jun. 27, 1997, now U.S. Pat. No. 5,987,188, which is acontinuation of U.S. application Ser. No. 08/460,933, filed Jun. 5,1995, now U.S. Pat. No. 5,680,183, which is a continuation of U.S.application Ser. No. 08/197,848, filed Feb. 15, 1994, now abandoned,which is a continuation of U.S. application Ser. No. 08/029,622, filedMar. 11, 1993, now U.S. Pat. No. 5,432,626, the subject matter of whichis incorporated by reference herein.

BACKGROUND OF THE INVENTION

[0002] 1 Field of the Invention

[0003] The present invention relates to a liquid crystal display deviceand, more particularly, to a liquid crystal display device of activematrix type using thin film transistors or the like.

[0004] 2 Prior Art

[0005] In a liquid crystal display device of active matrix type,non-linear device (e.g., switching devices) are disposed in a manner tocorrespond to a plurality of pixel electrodes arranged in matrix,respectively. The liquid crystal in each pixel is always drive, inprinciple, (at a duty ratio of 1.0). In comparison with the so-called“simple matrix type” which employs a time division driving system,therefore, the active system has better contrast and has become anindispensable technique particularly in a color liquid crystal displaydevice. A typical example of the switching devices is a thin filmtransistor (TFT).

[0006] A liquid crystal display circuit (or a liquid crystal displaypanel) is constructed: by superposing a lower substrate, which isformed, over a lower transparent glass substrate with reference to aliquid crystal layer, sequentially with a thin film transistor, atransparent pixel electrode, a passivation film for the thin filmtransistor, and a lower orientation film for orienting liquid crystalmolecules; and an upper substrate, which is formed over an uppertransparent glass substrate sequentially with a black matrix, a colorfilter, a passivation film for the color filter, a common transparentpixel electrode and an upper orientation film, such that theirorientation films are opposed to each other; by bonding the twosubstrates by a sealing material arranged around the edges of thesubstrates; and by sealing up the liquid crystals between the twosubstrates. Incidentally, a back light is arranged at the side of thelower substrate.

[0007] Here, the liquid crystal display device of active matrix typeusing the thin film transistors is known in Japanese Patent Laid-OpenNo. 309921/1988 or on pp. 193 to 210 of Nikkei Electronics entitled“Active Matrix Type Color Liquid Crystal Display of 12.5 Type AdoptingRedundant Construction” and issued on Dec. 15, 1986 by NIKKEIMcGRAW-HILL, for example.

SUMMARY OF THE INVENTION

[0008] Since a shield casing made of a metal plate or a liquid crystaldisplay circuit is fixed by means of rivets, the liquid crystal displaydevice of the prior art is troubled by a difficulty in repair orreplacement of the back lights.

[0009] An object of the present invention is to provide a liquid crystaldisplay device which can be easily repaired or repaired in its backlights.

[0010] According to one embodiment of the present invention, there isprovided a liquid crystal display device which comprises: a shieldcasing made of a metal plate and having fixing pawls and fixing hooks;an middle frame for holding a liquid crystal display; and a lower casingfor packaging back lights, wherein the fixing pawls of said shieldcasing are bent in corresponding recesses formed in the middle frame,and wherein the fixing hooks of said shield casing are fitted oncorresponding projections formed on the lower casing.

[0011] The liquid crystal display device can be easily repaired andreplaced in its back lights because the fixing pawls and hooks of theshield casing can be easily removed and because the shield casing, themiddle frame for holding the liquid crystal display and the lower casingfor packaging the back lights are easily assembled and disassembled.

BRIEF DESCRIPTION OF THE DRAWINGS

[0012]FIG. 1 is a top plan view showing an essential portion of onepixel of the liquid crystal display of a color liquid crystal displaycircuit of active matrix type, to which is applied the presentinvention;

[0013]FIG. 2 is a section taken along line 2-2 of FIG. 1 and shows onepixel and its peripheral portion;

[0014]FIG. 3 is a section taken along line 3-3 of FIG. 1 and shows anadditional capacitor Cadd;

[0015]FIG. 4 is a top plan view showing an essential portion of a liquidcrystal display circuit arranged with a plurality of pixels shown inFIG. 1;

[0016]FIG. 5 is a top plan view drawing only layers q2 and AS of thepixel shown in FIG. 1;

[0017]FIG. 6 is a top plan view drawing only layers d1, d2 and d3 of thepixel shown in FIG. 1;

[0018]FIG. 7 is a top plan view drawing only a pixel electrode layer, alight-shielding film and a color filter layer of the pixel shown in FIG.1;

[0019]FIG. 8 is a top plan view showing an essential portion of only thepixel electrode layer, the light-shielding layer and the color filterlayer shown in FIG. 6;

[0020]FIG. 9 presents a top plan view and a section showing the vicinityof a connecting portion between a gate terminal GTM and a gate signalline GL;

[0021]FIG. 10 presents a top plan view and a section showing thevicinity of a connecting portion between a drain terminal DTM and avideo signal line DL;

[0022]FIG. 11 is an equivalent circuit diagram showing a liquid crystaldisplay circuit of a color liquid crystal display device of activematrix type;

[0023]FIG. 12 is an equivalent circuit diagram showing the pixel shownin FIG. 1;

[0024]FIG. 13 presents a flow chart of sections of a pixel portion and agate terminal portion and shows C the fabrication steps A to C at theside of a substrate SUB1;

[0025]FIG. 14 presents a flow chart of sections of the pixel portion andthe gate terminal portion and shows the fabrication steps D to F at theside of the substrate SUB1;

[0026]FIG. 15 presents a flow chart of sections of the pixel portion andthe gate terminal portion and shows the fabrication steps G to I at theside of the substrate SUB1;

[0027]FIG. 16 is a top plan view for explaining the construction amatrix peripheral portion of a display panel;

[0028]FIG. 17 is a panel top plan view for exaggerating and explainingthe peripheral portion of FIG. 16 more specifically;

[0029]FIG. 18 is an enlarged top plan view showing a corner of a displaypanel including an electric connection portion of upper and lowersubstrates;

[0030]FIG. 19 is a section showing the pixel portion of a matrix at thecenter and the vicinity of a panel corner-and the vicinity of a videosignal terminal portion at the two sides;

[0031]FIG. 20 is a section showing panel edge portions with and withouta scanning signal terminal at the lefthand and righthand sides;

[0032]FIG. 21 is a section showing a structure of a tape carrier packageTCP, in which an integrated circuit chip CHI constituting a drivecircuit is mounted on a flexible wiring substrate;

[0033]FIG. 22 is a section showing the state of an essential portion, inwhich the tape carrier package TCP is connected with a video signalcircuit terminal DTP of a liquid crystal display panel PNL;

[0034]FIG. 23 is an exploded perspective view showing a liquid crystaldisplay module;

[0035]FIG. 24 presents upper side, front side, rear side, righthand sideand lefthand side views of a shield casing of the liquid crystal displaymodule;

[0036]FIG. 25 is a perspective view showing the shield casing and takenfrom the upper side;

[0037]FIG. 26 is a upper side view showing the state, in whichperipheral drive circuits are packaged in the liquid crystal displaypanel;

[0038]FIG. 27 presents upper side, front side, rear side, righthand sideand lefthand side views of a middle frame;

[0039]FIG. 28 is a lower side view showing the middle frame;

[0040]FIG. 29 is a perspective view showing the middle frame and takenfrom the upper side;

[0041]FIG. 30 is a lower side view showing a drive circuit substrate tobe mounted on the middle frame;

[0042]FIG. 31 is an upper side view showing the connection state betweenthe peripheral drive circuit substrate (as viewed from the upper side)of the liquid crystal display and the drive circuit substrate (as viewedfrom the lower side) to be mounted on the middle frame;

[0043]FIG. 32 presents upper side, rear side, righthand side andlefthand side views of a back light support;

[0044]FIG. 33 is a perspective view showing the back light support andtaken from the upper side;

[0045]FIG. 34 presents upper side (or reflection side), rear side,righthand side and lefthand side of a lower casing;

[0046]FIG. 35 is a lower side view of the lower casing;

[0047]FIG. 36 is a perspective view showing the lower casing and takenfrom the upper side;

[0048]FIG. 37 presents upper side, rear side, righthand side andlefthand side views showing the state, in which the back light support,back lights and an inverter circuit substrate are mounted in the lowercasing;

[0049]FIG. 38 is a section (as taken along line 38-38 of FIG. 34) of thelower casing; and

[0050]FIG. 39 is a section taken along line 39-39 of FIG. 37.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0051] The present invention, other objects of the present invention,and other features of the present invention will become apparent fromthe following description to be made with reference to the accompanyingdrawings.

[0052] <<Active Matrix Liquid Crystal Display Device>>

[0053] Here will be described in the following the construction of thepresent invention in connection with embodiments of a color liquidcrystal display device of active matrix type, to which is applied thepresent invention. Incidentally, the parts having identical functionsare designated at identical reference characters throughout all theFigures for describing the embodiments, and their repeated descriptionswill be omitted.

[0054] <<Summary of Matrix Portion>>

[0055]FIG. 1 is a top plan view showing one embodiment of one pixel andits peripheral portion of the active matrix type color liquid crystaldisplay device to which is applied the present invention. FIG. 2 is asection taken along line 2-2 of FIG. 1. FIG. 3 is a section taken alongline 3-3 of FIG. 1. On the other hand, FIG. 4 is a top plan view showingthe case in which a plurality of pixels shown in FIG. 1 are arranged.

[0056] As shown in FIG. 1, each pixel is arranged in a cross region(defined by four signal lines) between two adjacent scanning signallines (e.g., gate signal lines or horizontal signal lines) GL and twovideo signal lines (e.g., drain signal lines or vertical signal lines)DL. Each pixel includes a thin film transistor TFT, a transparent pixelelectrode ITO1 and a latching capacitor Cadd. The scanning signal linesGL are extended in the column direction and arranged in plurality in therow direction. The video signal lines DL are extended in the rowdirection and arranged in plurality in the column direction.

[0057] As shown in FIG. 2, the thin film transistor TFT and thetransparent pixel electrode ITO1 are formed at the side of a lowertransparent glass substrate SUB1 across a liquid crystal layer LC, and acolor film FIL and a back matrix pattern BM for light shielding areformed at the side of an upper transparent glass substrate SUB2. Theside of the lower transparent glass substrate SUB1 is made to have athickness of about 1.1 mm, for example. On the both surfaces of thetransparent glass substrates SUB1 and SUB2, there are formed siliconoxide layers SIO which are deposited by the dip treatment. Accordingly,even if there exist sharp defects at the surfaces of the transparentglass substrates SUB1 and SUB2, the scanning signal lines GL as well asthe color filter FIL to be deposited thereon can be protected from thesharp defects since the defects are covered with the silicon oxide layerSIO.

[0058] On the surface of the upper transparent glass substrate SUB2 atthe inner side (or the side of the liquid crystal LC), there aresequentially laminated the light-shielding film BM, the color filterFIL, a passivation film PSV2, a common transparent pixel electrode ITO2(or COM) and an upper orientation film ORI2.

[0059] <<Summary of Matrix Periphery>>

[0060]FIG. 16 is a top plan view showing an essential portion of theperiphery of a matrix (AR) of a display panel PNL including the upperand lower glass substrates SUB1 and SUB2. FIG. 17 is a top plan viewfurther exaggerating the peripheral portion. FIG. 18 is an enlarged topplan view showing the vicinity of a seal portion SL corresponding to thelefthand upper corner of the panel of FIGS. 16 and 17. Moreover, FIG. 19presents a section of FIG. 2 at the lefthand side, a section taken fromline 19 a-19 a of FIG. 18 at the righthand side, and a section showingthe vicinity of an external connection terminal DTM, to which isconnected a video signal drive circuit. Likewise, FIG. 20 presents asection showing the vicinity of an external connection terminal GTM, towhich is connected a scanning circuit, at the lefthand side and asection showing the vicinity of a seal portion having no externalconnection terminal at the righthand side.

[0061] In a fabrication of this panel, a plurality of devices aresimultaneously worked and divided by a single sheet of glass substrateso as to improve the throughput, if the panel has a small size, but aglass substrate having a standardized size for any kind is worked and isreduced to the sizes matching the individual kinds so as to share thefabrication facilities, if the size is large. In either case, the glassis cut after a series of steps. In FIGS. 16 to 18 showing the latterexample, FIGS. 16 and 17 show the state after the upper and lowersubstrates SUB1 and SUB2 have been cut, and FIG. 18 shows the statebefore the cutting operation. Letters LN designate the edges of the twosubstrates before the cutting operation, and characters CT1 and CT2designates the individual positions at which the substrates SUB1 andSUB2 are to be cut. In either case, the size of the upper substrate SUB2is so limited to the inside of the lower substrate SUB1 that theportions (as located at the upper and lower sides and the lefthand sidein the Figures), in which external connection terminal groups Tg and Td(although suffixes are omitted) are present in the completed state, maybe exposed to the outside. The terminal groups Tg and Td are named suchthat the scanning line connecting terminal GTM, the video signal circuitconnecting terminal DTM and their leading lines are collected inplurality at the unit of a tape carrier package TCP (as shown in FIGS.20 and 21) on which is packaged an integrated circuit chip CHI. Theleading line from the matrix portion of each group to the externalconnection terminal portion is inclined toward the two ends. This isbecause the terminals DTM and GTM of the display panel PNL are made tomatch the array pitch of the package TCP and the connection terminalpitch at each package TCP.

[0062] Between and along the edges of the transparent glass plates SUB1and SUB2, there is formed the seal pattern SL for sealing the liquidcrystal LC excepting a liquid crystal entrance INJ. The seal material ismade of an epoxy resin, for example. The common transparent pixelelectrode ITO2 at the side of the upper transparent glass substrate SUB2is connected at the four corners in the present embodiment with aleading line INT, which is formed at the side of the lower transparentglass substrate SUB1, in at least one portion by a silver paste materialAGP. The leading line INT is formed at the same fabrication step as thatof the later-described gate terminal GTM and drain terminal DTM.

[0063] The orientation films ORI1 and ORI2, the transparent pixelelectrode ITO1, the common transparent pixel electrode ITO2, and theindividual layers are formed in the seal pattern SL. Polarization platesPOL1 and POL2 are individually formed on the outer surfaces of the lowertransparent glass substrate SUB1 and the upper transparent glasssubstrate SUB2. The liquid crystal LC is filled in the region which isdefined by the seal pattern SL between the lower orientation film ORI1and the upper orientation film ORI2 for setting the orientations of theliquid crystal molecules. The lower orientation film ORI1 is formed overa passivation film PSV1 at the side of the lower transparent glasssubstrate SUB1.

[0064] This liquid crystal display device is assembled: by superposingthe individual layers at the sides of the lower transparent glasssubstrate SUB1 and the upper transparent glass substrate SUB2; byforming the seal pattern SL at the side of the substrate SUB2; bysuperposing the lower transparent glass substrate SUB1 and the uppertransparent glass substrate SUB2; by injecting the liquid crystal LCfrom the opening INJ of the seal member SL to seal the injectionentrance INJ with the epoxy resin or the like; and by cutting the upperand lower substrates.

[0065] <<Thin Film Transistor TFT>>

[0066] If a positive bias is applied to the gate electrode GT, the thinfilm transistor TFT has its channel resistance reduced between itssource and drain. If the bias is reduced to zero, the thin filmtransistor TFT operates to have its channel resistance increased.

[0067] The thin film transistor TFT of each pixel is divided into two(or plurality) in the pixel so that it is composed of thin filmtransistors (or divided thin film transistors) TFT1 and TFT2. These thinfilm transistors TFT1 and TFT2 are individually made to have asubstantially equal size (in the channel length and width). Each ofthese divided thin film transistors TFT1 and TFT2 is composed mainly ofa gate electrode GT, a gate insulating film GI, an i-type (i.e.,intrinsic type not doped with a conductivity type determining impurity)amorphous silicon (Si) semiconductor layer AS, and a pair of sourceelectrode SD1 and drain electrode SD2. Incidentally, the source anddrain are intrinsically determined in dependence upon the bias polarityinbetween, and this polarity is inverted during the operation in thecircuit of the present display device. Thus, it should be understoodthat the source and drain are interchanged during the operation. In thefollowing description, however, one is fixed as the source whereas theother is fixed as the drain, for conveniences only.

[0068] <<Gate Electrode GT>>

[0069] The gate electrode GT is formed to project perpendicularly (i.e.,upward, as viewed in FIGS. 1 and 5) from the scanning signal lines GL(or branched in the “T-shape”), as shown in detail in FIG. 5 (presentinga top plan view showing the second conductive layer g2 and i-typesemiconductor layer AS of FIG. 1 only). The gate electrode GT isextended to the regions to be individually formed with the thin filmtransistors TFT1 and TFT2. These thin film transistors TFT1 and TFT2have their individual gate electrodes GT integrated (as their commongate electrode) to merge into the scanning signal line GL. The gateelectrode GT is constituted by the single level conductive layer g2. Thesecond conductive layer g2 is formed, for example, by sputteringaluminum (Al) in the thickness of about 1,000 to 5,500 angstroms. On thegate electrode GT, there is provided an anodized oxide film AOF of Al.

[0070] This gate electrode GT is made so slightly large as to cover thesemiconductor layer AS completely (as viewed upward), as shown in FIGS.1 and 2 and FIG. 5. In case, therefore, back lights BL such asfluorescent lamps are attached to the bottom of the substrate SUB1, thisopaque Al gate electrode GT establishes a shadow to shield thesemiconductor layer AS from the back lights, thus substantiallyeliminating the conducting phenomenon due to the optical irradiation,i.e., the deterioration of the OFF characteristics of the TFTs. Here,the intrinsic size of the gate electrode GT is given the least necessarywidth (including the positioning allowance of the gate electrode GT, thesource electrode SD1 and the drain electrode SD2) for extending betweenthe source and drain electrodes SD1 and SD2. The depth for determiningthat channel width W is determined in dependence upon the factor W/Ldetermining the mutual conductance gm, i.e., the ratio to the distance(i.e., the channel length) L between the source and drain electrodes SD1and SD2. The size of the gate electrode GT in the present liquid crystaldisplay device is naturally made larger than the aforementionedintrinsic size.

[0071] <<Scanning Signal Line GL>>

[0072] The scanning signal line GL is constituted by the secondconductive film g2. The second conductive film g2 of the scanning signalline GL is formed at the same step as and integrally with the secondconductive film g2 of the gate electrode GT. Moreover, the scanningsignal line GL is also formed thereon with the anodized oxide film AOFof Al.

[0073] <<Gate Insulating Film GT>>

[0074] The insulating film GI is used as the individual gate insulatingfilms of the thin film transistors TFT1 and TFT2. The insulating film GIis formed over the gate electrode GT and the scanning signal line GL.The insulating film GI is formed of, for example, a silicon nitride filmprepared by the plasma CVD, to have a thickness of 1,200 to 2,700angstroms (e.g., about 2,000 angstroms in the present liquid crystaldisplay device). The gate insulating film GI is formed to enclose theentirety of the matrix portion AR, as shown in FIG. 18, and to have itsperipheral portion removed to expose the external connection terminalsDTM and GTM to the outside.

[0075] <<i-Type Semiconductor Layer AS>>

[0076] The i-type semiconductor layer AS is used as the individualchannel forming regions of the thin film transistors TFT1 and TFT2divided into a plurality of parts, as shown in FIG. 5. The i-typesemiconductor layer AS is formed of an amorphous silicon film orpolycrystalline silicon film to have a thickness of about 200 to 2,200angstroms (e.g., about 2,000 angstroms in the present liquid crystaldisplay device).

[0077] This i-type semiconductor layer AS is formed subsequent to theformation of the Si₃N₄ gate insulating film GI by changing thecomponents of supply gases but by using the common plasma CVD systemsuch that it is not exposed from the system to the outside. On the otherhand, an N(+)-type layer d0 (shown in FIG. 2) doped with 2.5% ofphosphor (P) for the ohmic contact is like-wise formed subsequently tohave a thickness of about 200 to 500 angstroms (e.g., about 300angstroms in the present liquid crystal display device). After this, thelower substrate SUB1 is taken out of the CVD system, and the N(+)-typelayer d0 and the i-type AS are patterned into independent islands by thephotographic technology, as shown FIGS. 1 and 2 and FIG. 5.

[0078] The i-type semiconductor layer As is also formed between theintersecting portions (or crossover portions) of the scanning signalline GL and the video signal line DL, as shown in FIGS. 1 and 5. Thiscrossover i-type semiconductor layer As is formed to reduce theshort-circuiting between the scanning signal line GL and the videosignal line DL at the intersecting portion.

[0079] <<Transparent Pixel Electrode ITO1>>

[0080] The transparent pixel electrode ITO1 constitutes one of the partsof a pixel electrode of a liquid crystal display.

[0081] The transparent pixel electrode ITO1 is connected with both thesource electrode SD1 of the thin film transistor TFT1 and the sourceelectrode SD1 of the thin film transistor TFT2. Even if, therefore, oneof the thin film transistors TFT1 and TFT2 become defective, a suitableportion may be cut by a laser beam in case the defect invites an adverseaction. Otherwise, the situation may be left as it is because the otherthin film transistor is normally operating. Incidentally, both the twothin film transistors TFT1 and TFT2 scarcely become defective, and theprobability of the point defect or line defect can be drasticallyreduced by that redundant system. The transparent pixel electrode ITO1is formed of a first conductive film d1, which is made of a transparentconductive film (of Indium-Tin-Oxide, i.e., ITO or NESA film) to have athickness of 1,000 to 2,000 angstroms (e.g., about 1,400 angstroms inthe present liquid crystal display device).

[0082] <<Source Electrode SD1 and Drain Electrode SD2>>

[0083] The individual source electrodes SD1 and drain electrodes SD2 ofthe divided thin film transistors TFT1 and TFT2 are formed over thesemiconductor layer AS and separately from each other, as shown in FIGS.1 and 2 and FIG. 6 (presenting a top plan view showing the layers d1 tod3 of FIG. 1 only).

[0084] Each of the source electrode SD1 and the drain electrode SD2 isformed by overlaying a second conductive film d2 and a third conductivefilm d3 sequentially from the lower side contacting with the N(+)-typesemiconductor layer d0. These second conductive film d2 and thirdconductive film d3 of the source electrode SD1 are formed at the samefabrication step as those of the drain electrode SD2.

[0085] The second conductive film d2 is formed of a sputtered chromium(Cr) film to have a thickness of 500 to 1,000 angstroms (e.g., about 600angstroms in the present liquid crystal display device). The Cr film isformed to have a thickness no more than 2,000 angstroms because itestablishes a high stress if it is made excessively thick. The Cr filmhas an excellent contact with the N(+)-type semiconductor layer d0. TheCr film constitutes the so-called “barrier layer” preventing the Al ofthe third conductive film d3 described hereinafter from diffusing intothe N(+)-type semiconductor layer d0. The second conductive film d2 maybe made of not only the aforementioned Cr film but also a refractorymetal (e.g., Mo, Ti, Ta or W) film or its silicide (e.g., MoSi₂, TiSi₂,TaSi₂ or WSI₂).

[0086] The third conductive film d3 is formed by sputtering Al to have athickness of about 3,000 to 5,000 angstroms (e.g., about 4,000 angstromsin the present liquid crystal display device). The Al layer is lessstressed than the Cr layer so that it can be formed to have a largerthickness thereby to reduce the resistances of the source electrode SD1,the drain electrode SD2 and the video signal line DL. The thirdconductive film d3 may be formed of not only the pure Al film but alsoan Al film containing silicon or copper (Cu) as an additive.

[0087] After the second conductive film d2 and the third conductive filmd3 have been patterned with the same mask pattern, the N(+)-type layerd0 is removed by using the same photographic mask or the secondconductive film d2 and the third conductive film d3. Specifically, theN(+)-type layer d0 left on the i-th layer AS is removed inself-alignment while leaving the second conductive film d2 and the thirdconductive film d3 as they are. Since, at the same time, the N(+)-typelayer d0 is etched to remove its whole thickness, the i-th layer AS isslightly etched off at its surface portion, but this removal may becontrolled by the etching period.

[0088] The source electrode SD1 is connected with the transparent pixelelectrode ITO1. The source electrode SD1 is formed along the steppedshape (i.e., the step corresponding to the sum of the thicknesses of thesecond conductive film g2, the anodized oxide film AOF, the i-typesemiconductor layer AS and the N(+)-type semiconductor layer d0) of thei-type semiconductor layer AS. More specifically, the source electrodeSD1 is composed of the second conductive film d2 formed along thestepped shape of the i-type semiconductor layer AS and the thirdconductive film d3 formed over the second conductive film d2. This thirdconductive film d3 of the source electrode SD1 is formed to ride overthe i-type semiconductor AS, because the Cr film of the secondconductive film d2 cannot be made so thick because of the increase inthe stress as to ride over the stepped shape of the i-type semiconductorlayer AS. In short, the second conductive film d2 is made thick toimprove the step coverage. The third conductive film d3 can be madethick so that it can highly contribute to the reduction of theresistance of the source electrode SD1 (as well as those of the drainelectrode SD2 and the video signal line DL).

[0089] <<Passivation Film PSV1>>

[0090] Over the thin film transistor TFT and the transparent pixelelectrode ITO1, there is formed the passivation film PSV1, which isprovided mainly for protecting the thin film transistor TFT againsthumidity or the like. Thus, the passivation film PSV1 to be used ishighly transparent and humidity resistant. The passivation film PSV1 isformed of a silicon oxide film or silicon nitride film prepared by theplasma CVD, to have a thickness of about 1 micron.

[0091] The passivation film PSV1 is formed, as shown in FIG. 18, toenclose the entirety the matrix portion AR and is removed at itsperipheral portion to expose the external connection terminals DTM andGTM to the outside and at the portion, in which the common electrode COMat the side of the upper substrate SUB2 is connected with the externalconnection terminal connecting leading line INT of the lower substrateSUB1 by means of the silver paste AGP. In connection with the thicknessconnection between the passivation film PSV1 and the gate insulatingfilm GI, the former is made thick considering the passivation effectwhereas the latter is made thin considering the mutual conductance gm ofthe transistor. As a result, as shown in FIG. 18, the passivation filmPSV1 having a high passivation effect is made so larger than the gateinsulating film GI as to have its peripheral portion passivated as wideas possible.

[0092] <<Shielding Film BM>>

[0093] At the side of the upper substrate SUB2, there is disposed theshielding film BM for shielding any external light (i.e., the lightcoming from the top of FIG. 2) from entering the i-type semiconductorlayer AS to be used as the channel forming region, as hatched to havethe pattern shown in FIG. 7. Here, FIG. 7 is a top plan view showingonly the first conductive layer d1 comprised of the ITO film, the filterlayer FIL and the shielding film BM of FIG. 1. The shielding film BM isformed of a film having a high shielding property to the light, e.g., analuminum film or chromium film. In the present liquid crystal displaydevice, the shielding film BM is formed of a chromium film by thesputtering, to have a thickness of about 1,300 angstroms.

[0094] As a result, the common semiconductor layer AS shared by the thinfilm transistors TFT1 and TFT2 is sandwiched between the upper shieldingfilm BM and the lower but larger gate electrode GT so that it isshielded from the outside natural light or the back lights. Theshielding film BM is formed around the pixel, as hatched in FIG. 6.Specifically, the shielding film BM is formed in a lattice (of blackmatrix) shape, which defines the effective display region of one pixel.As a result, the contour of each pixel is clarified to improve thecontrast by the shielding film BM. In other words, this shielding filmBM has two functions, i.e., the shielding for the semiconductor layer ASand the black matrix functions. Further, since the portion of thetransparent pixel electrode ITO1 (at the lower righthand portion ofFIG. 1) opposed to the foot of the rubbing direction is shielded fromthe light by the shielding film BM, even if a domain is induced at theabove portion, the display characteristics are hardly deterioratedbecause the domain is shaded.

[0095] Incidentally, the back lights may be attached to the side of theupper transparent glass substrate SUB2, whereas the lower transparentglass substrate SUB1 may be disposed at the observation side (exposed tothe outside).

[0096] The shielding film BM is additionally formed at its peripheralportion with a framed pattern, as shown in FIG. 17, which is formed tomerge into the pattern of the matrix portion having a plurality ofdot-shaped openings, as shown in FIG. 7. The shielding film BM at theperipheral portion is extended to the outside of the seal portion SL, asshown in FIGS. 17 to 20, thereby to prevent the leakage light such asthe light reflected from an implemented machine such as a personalcomputer from entering the matrix portion. On the other hand, theshielding film BM is limited to the inside of the edge of the substrateSUB2 within about 0.3 to 1.0 mm and is formed to avoid the cut region ofthe substrate SUB2.

[0097] <<Color Filter FIL>>

[0098] The color filter FIL is prepared by cooling a dyeing base, whichis made of a resin material such as an acrylic resin, with a dyes. Thecolor filter FIL is formed (as shown in FIG. 8) in the shape of stripeand in a position to face the pixel. (FIG. 8 shows the first conductivefilm d1, the black matrix layer BM and the color filter layer FIL ofFIG. 4 only, and the B, G and R filters are hatched at 45 degrees and135 degrees and in a crossing manner, respectively.) The color filterFIL is made slightly large to cover the pixel electrode ITO1 in itsentirety, as shown in FIGS. 7 to 9. The shielding film BM is so formedinside of the peripheral edge of the pixel electrode ITO1 as to overlapthe color filter FIL and the pixel electrode ITO1.

[0099] The color filter FIL can be formed in the following manner. Firstof all, the dyeing base is formed on the surface of the uppertransparent glass substrate SUB2, and the dyeing base other than that inthe red color filter forming region is removed by the photolithographictechnology. After this, the dyeing base is dyed with the red dye andfixed to form the red filter R. Next, the green filter G and the fluefilter B are sequentially formed by the similar steps.

[0100] <<Passivation Film PSV2>>

[0101] The passivation film PSV2 is provided for preventing the dyes fordifferent colors of the color filter FIL from leaking into the liquidcrystal LC. The passivation film PSV2 is made of a transparent resinmaterial such as an acrylic resin or epoxy resin.

[0102] <<Common Transparent Pixel Electrode ITO2>>

[0103] The common transparent pixel electrode ITO2 is opposed to thetransparent pixel electrode ITO1, which is provided for each pixel atthe side of the lower transparent glass substrate SUB1, so that theliquid crystal LC has its optical state varied in response to thepotential difference (or electric field) between each pixel electrodeITO1 and the common pixel electrode ITO2. This common transparent pixelelectrode ITO2 is fed with the common voltage Vcom. In the presentembodiment, this common voltage Vcom is set at an intermediate potentialbetween a driving voltage Vdmin at the low level and a driving voltageVdmax at the high level, both of which are applied to the video signalline DL. An AC voltage may be applied in case the supply voltage of theintegrated circuit to be used in the video signal drive circuit is to bereduced to one half. Incidentally, the top plan shape of the commontransparent pixel electrode ITO2 should be referred to FIGS. 17 and 18.

[0104] <<Gate Terminal Portion>>

[0105]FIG. 9 presents a connection structure from the scanning signalline GL of the display matrix to its external connection terminal GTM,and (A) is a top plan view whereas (B) is a section taken along line B-Bof (A). Incidentally, FIG. 9 corresponds to the lower portion of FIG.18, and the hatched line portions are shown by straight lines forconveniences.

[0106] Letters AO designate a photolithographic mask pattern, namely, aphoto resist pattern for selective anodization. As a result, this photoresist is anodized and then removed so that the shown pattern AO is notleft as a complete but as a trace because the oxide film AOF isselectively formed in the gate line GL, as shown in section. Withreference to the boundary line AO of the photo resist in the top planview, the lefthand side is the region which is covered with the resistand is not anodized, whereas the righthand side is the region which isexposed from the resist to the outside and is anodized. The anodized Allayer g2 has its surface formed with its oxide A1 ₂O₃ film AOF and itslower conductive portion reduced in volume. Of course, the anodizationis so carried out for a proper time and at a proper voltage that theconductive portion may be left. The mask pattern AO is made to intersectthe scanning line GL not in a straight line but in a folded crank shape.

[0107] The Al layer g2, as shown, is hatched for easy understanding, butthe region left non-anodized is patterned in a comb shape. This isintended to suppress the probability of the line breakage and thesacrifice of the conductivity to the minimum while preventing anyformation of whiskers by narrowing the width of each Al layer andbundling a plurality of them in parallel, because the whisker will occurin the surface for the wide Al layers. In the present embodiment,therefore, the portion corresponding to the root of the comb isdisplaced along the mask AO.

[0108] The gate terminal GTM is formed of: a Cr layer g1 having anexcellent contact with the silicon oxide SiO layer and a higherresistance to galvanic corrosion than Al or the like; and thetransparent conductive layer d1 protecting the surface of the Cr layerg1 and having the same level (belonging to the same layer and formedsimultaneously) as the pixel electrode ITO1. Incidentally, theconductive layers d2 and d3 formed over and on the sides of the gateinsulating film GI are left as a result that the conductive layers g2and g1 are covered with the photo resist so that they may not be etchedoff by pin holes or the like at the time of etching the conductivelayers d3 and d2. Moreover, the ITO layer d1 extended rightward acrossthe gate insulating film GI is provided for further completing thesimilar counter-measures.

[0109] In the top plan view, the gate insulating film GI is formed atthe more righthand side than its boundary, and a passivation film PSV1is also formed at the more righthand side than the boundary so that theterminal portion GTM at the lefthand side can be exposed from them intoelectric contact with the external circuits. Although only one pair ofthe gate line GL and the gate terminal is shown, a plurality of pairsare arranged vertically in FIG. 18, as a matter of fact, to constitutethe terminal group Tg (as shown in FIGS. 17 and 18), and the gateterminals have their lefthand ends are extended in the fabricationprocess across the cut region CT1 of the substrate and areshort-circuited by a line SHg. This short-circuiting line SHg in thefabrication process is useful for supplying the electric power at theanodizing time and for preventing the electrostatic breakdown at thetime of rubbing the orientation film ORI1.

[0110] <<Drain Terminal DTM>>

[0111]FIG. 10 is a diagram showing the connection from the video signalline DL to its external connection terminal DTM, and (A) presents a topplan view whereas (B) presents a section taken along line B-B of (A).Incidentally, FIG. 10 corresponds to the upper righthand portion of FIG.18 and has its righthand direction corresponding to the upper endportion (or the lower end portion) of the substrate SUB1, although thedirection of the drawing is changed for conveniences.

[0112] Letters TSTd designate a test terminal which is not connectedwith any external terminal but widened to contact with a probe or thelike. Likewise, the drain terminal DTM is also made wider than thewiring portion as to connected with the external terminal. The testterminal TSTd and the external connection drain terminal DTM are soalternately arrayed in plurality as to be vertically staggered so thatthe test terminal TSTd terminates without reaching the end portion ofthe substrate SUB1, as shown. But, the drain terminals DTM constitutethe terminal group Td (whose suffix is omitted), as shown in FIG. 18,and are further extended across the cut line CT1 of the substrate SUB1so that all of them are short-circuited to each other through lines SHdso as to prevent any electrostatic breakdown during the fabricationstep. The drain connection terminals are connected to the opposite sidesof the video signal lines DL, in which the test terminal TSTd arepresent, across the matrix, whereas the test terminals are connected tothe opposite sides of the video signal lines DL, in which the drainconnection terminals DTM are present, across the matrix.

[0113] By a reason similar to the gate terminal GTM, the drainconnection terminal DTM is formed of two layers, i.e., the Cr layer g1and the ITO layer d1 and is connected with the video signal line DLthrough the portion, from which is removed the gate insulating film GI.The semiconductor layer AS formed over the end portion of the gateinsulating film GI is provided for etching the edge of the gateinsulating film GI in a taper shape. For connection with an externalcircuit, the passivation film PSV1 is naturally removed from theterminal DTM. Letters AO designate the aforementioned anodizing maskwhich has its boundary formed to enclose the entirety of the matrix. Asshown, the lefthand side is covered with the mask, but the remaininguncovered portion has no layer g2 so that it has no relation to thepattern.

[0114] The leading lines from the matrix portion to the drain terminalportion DTM are constructed, as shown at (C) in FIG. 19, such that thelayers d2 and d3 at the same level as the video signal lines DL arelaminated midway of the seal pattern SL just over the layers d1 and g1at the same level as the drain terminal portion DTM. This constructionis intended to minimize the probability of breakage of lines thereby toprotect the galvanically corrosive Al layer as much as possible with thepassivation film PSV1 and the seal pattern SL.

[0115] <<Structure of Latching Capacitor Cadd>>

[0116] The transparent pixel electrode ITO1 is formed to overlap theadjoining scanning signal line GL at the end opposed to the end to beconnected with the thin thin film transistor TFT. This superpositionconstitutes a latching capacity element (or an electrostatic capacityelement)Cadd which uses the transparent pixel electrode ITO as its oneelectrode PL2 and the adjoining scanning signal line GL as its otherelectrode PL1, as is apparent from FIGS. 1 and 3. This latching capacityelement Cadd has its dielectric films formed of: the insulating film GIused as the gate insulating film of the thin film transistor TFT; andthe anodized film AOF.

[0117] The latching capacitor Cadd is formed in the widened portion ofthe second conductive layer g2 of the scanning gate line GL, as isapparent from FIG. 5. Here, the second conductive film g2 at the portionintersecting the video signal line DL is thinned to reduce theprobability of the short-circuiting with the video signal line DL.

[0118] Even if the transparent pixel electrode ITO1 is broken at thestepped portion of the electrode PL1 of the latching capacitor Cadd, itsdefect is compensated by the island region which is constructed of thesecond conductive film d2 and the third conductive film d3 formed acrossthat step.

[0119] <<Equivalent Circuit of Whole Display Circuit>>

[0120]FIG. 11 shows an equivalent circuit diagram of the display matrixportion and a wiring diagram of its peripheral circuits. Although thisdrawing is a circuit diagram, it is depicted in a manner to correspondto a practical geometric disposition. Letters AR designate a matrixarray formed by disposing a plurality of pixels two-dimensionally.

[0121] In the drawing, letter X designates the video signal line, andsuffixes G, B and R are added to correspond to green blue and redpixels, respectively. Letter Y designates the scanning signal line GL,and suffixes 1, 2, 3, - - -, and so on are added in accordance with thesequence of the scanning timing.

[0122] The video signal line X (whose suffix is omitted) is alternatelyconnected with the upper (or odd-numbered) video signal driving circuitHe and with the lower (or even-numbered) video signal driving circuitHo.

[0123] The scanning signal line Y (whose suffix is omitted) is connectedwith a vertical scanning circuit V.

[0124] Letters SUP designate a circuit which includes a power supplycircuit for obtaining a plurality of divided and stabilized voltagesources from one voltage source, and a circuit for converting data forCRT (i.e., Cathode Ray Tube) from a host (i.e., a higher-orderoperational processor) to data for the TFT liquid crystal displaydevice.

[0125] <<Equivalent Circuit of Latching Capacitor Cadd and itsOperations>>

[0126] The equivalent circuit of the pixel shown in FIG. 1 is shown inFIG. 12. In FIG. 12, letters Cgs designate a parasitic capacitor to beformed between the gate electrode GT and the source electrode SD1 of thethin film transistor TFT. The parasitic capacitor Cgs has its dielectricfilm made of the insulating film GT and the anodized oxide film AOF.Letters Cpix designate a liquid crystal capacitor to be formed betweenthe transparent pixel electrode ITO1 (or PIX) and the common transparentpixel electrode ITO2 (or COM). The dielectric film of the liquid crystalcapacitor Cpix is formed of the liquid crystal LC< the passivation filmPSV1 and the alignment films ORI1 and ORI2. Letters Vlc designate a midpoint potential.

[0127] The latching capacity element Cadd functions to reduce theinfluences of the gate potential variation delta Vg upon the centerpotential (e.g., the pixel electrode potential) Vlc when the thin filmtransistor TFT switches, as expressed by the following formula:

delta Vlc={Cgs/(Cgs+Cadd+Cpix)}×deltavg,

[0128] wherein delta VIc indicates the variation of the centralpotential due to delta Vg. This variation delta Vlc causes the DCcomponent to be added to the liquid crystal LC and can be reduced themore for the higher latching capacitor Cadd. Moreover, the latchingcapacitor Cadd functions to elongate the discharge time and stores thevideo information for a long time after the thin film transistor TFT isturned off. The DC component to be applied to the liquid crystal LC canimprove the lifetime of the liquid crystal LC, to reduce the so-called“printing”, by which the preceding image is left at the time ofswitching the liquid crystal display frame.

[0129] Since the gate electrode GT is enlarged to such an extent as tocover the semiconductor layer AS completely, as has been describedhereinbefore, the overlapped area with the source electrode SD1 and thedrain electrode SD2 is increased to cause an adverse effect that theparasitic capacity Cgs is increased to make the center potential Vlcliable to be influenced by the gate (scanning) signal Vg. However, thisdemerit can be eliminated by providing the latching capacitor Cadd.

[0130] The latching capacity of the latching capacitor Cadd is set fromthe pixel writing characteristics to a level four to eight times aslarge as that of the liquid crystal capacity Cpix (4*Cpix<Cadd<8*Cpix)and eight to thirty two times as large as that of the capacity Cgs(8*Cgs<Cadd<32*Cgs).

[0131] <<Method of Connecting Electrode Line of Latching CapacitorCadd>>

[0132] The initial stage scanning signal line GL (i.e., Y_(O)) to beused only as the capacity electrode line is set to the same potential asthat of the common transparent pixel electrode (Vcom) ITO2, as shown inFIG. 11. In the example of FIG. 18, the initial stage scanning signalline is short-circuited to the common electrode COM through the terminalGTO, the leading line INT, a terminal DTO and an external line.Alternatively, the initial stage latching capacity electrode line Y_(O)may be connected with the final stage scanning signal line Yend or a DCpotential point (or AC ground point) other than the Vcom, or connectedto receive one excess scanning pulse Y_(O) from the vertical scanningcircuit V.

[0133] <<Structure for Connection with External Circuit>>

[0134]FIG. 21 is a diagram showing a sectional structure of the tapecarrier package TCP, in which the integrated circuit chip CHI is mountedon the flexible wiring substrate (as called “TAB”: Tape AutomatedBonding), to construct the scanning signal driving circuit V or thevideo signal driving circuits He and Ho. FIG. 22 is a section showingthe state of an essential portion, in which the tape carrier package TCPis connected in the present example with the video signal circuitterminal DTM.

[0135] In the same drawing, letters TTB designate an inputterminal/wiring portion of the integrated circuit CHI, and letters TTMdesignate an output terminal/wiring portion of the integrated circuitCHI. These portions are made of Cu, for example, and have theirindividual inner leading end portions (as called the “inner leads”)connected with a bonding pad PAD of the integrated circuit CHI by theso-called “faced-down bonding method”. The terminals TTB and TTM havetheir outer leading end portions (as called the “outer leads”)corresponding to the input and output of the semiconductor integratedcircuit chip CHI, respectively, and are connected with the CRT/TFTconverter circuit and the power supply circuit SUP by the solderingmethod and with the liquid crystal display panel PNL through ananisotropic conductive film ACF. The package TCP is so connected withthe panel that its leading end portion covers the passivation film PSV1having the connection terminal DTM exposed at the side of the panel PNL.As a result, the external connection terminal DTM (GTM) is strongagainst the galvanic corrosion because it is covered with at least oneof the passivation film PSV1 or the package TCP.

[0136] Letters BF1 designate a base film made of polyimide or the like,and letters SRS designate a solder resist film for masking to preventthe solder from leaking to an unnecessary portion at the soldering time.The gap between the upper and lower glass substrates outside of the sealpattern SL is protected after the rinsing step by the epoxy resin EPX orthe like, and this protection is multiplexed by filling a silicone resinSIL between the package TCP and the upper substrate SUB2.

[0137] <<Manufacturing Process>>

[0138] Next, a process for manufacturing the side of the substrate SUB1of the aforementioned liquid crystal display device will be describedwith reference to FIGS. 13 to 15. In these Figures, the central lettersindicate the abbreviations of the step names, and the lefthand sidesshow the pixel portions shown in FIG. 2 whereas the righthand sides showthe process flow, as viewed in section from the vicinity of the gateterminals shown in FIG. 9. Steps A to I excepting Step D are divided tocorrespond to the individual photolithographic steps, and any sectionsof the individual steps indicate the steps, at which the photo resistsare removed after the photolithographic treatments. Incidentally, thesephotolithographic treatments are intended in the present description toimply a series of operations from the application of a photo resist tothe development through a selective exposure using a mask, and theirrepeated description will be omitted. The description will be made inaccordance with the steps divided, as follows.

[0139] Step A, FIG. 13

[0140] A silicon dioxide film SIO is deposited by the dip treatment onboth surfaces of a lower transparent glass substrate SUB1 made of 7059glass (under the trade name), and then a baking is carried out at 500degree for 60 minutes. A first conductive film gi consisting of a 1,100angstrom-thick chromium film is deposited on the lower transparent glasssubstrate SUB1 by the sputtering. After the photolithographic treatment,the first conductive film g1 is etched selectively by the photoetchingusing a ceric ammonium nitrate solution as an etching solution, therebyforming a gate terminal GTM and a drain terminal DTM and forming also apower bus line SMg for anodization for connecting the gate terminal GTM,and a pad (although not shown) connected with the power bus line SHg foranodization.

[0141] Step B, FIG. 13

[0142] A second conductive film g2 having a thickness of 2,800 angstromsand made of Al—Pd, Al—Si, Al—Si—Ti or Al—Si—Cu is formed by thesputtering. After the.photolithographic treatment, the second conductivefilm g2 is selectively etched with a mixed acid solution of phosphoricacid, nitric acid and glacial acetic acid.

[0143] Step C, FIG. 13

[0144] After the photolithographic treatment (i.e., after the formationof the aforementioned anodized mask AO), the substrate SUB1 is dipped inthe anodizing liquid which is prepared by diluting a solution containing3% of tartaric acid adjusted to PH 6.2 to 6.3 with a solution ofethylene glycol, and the anodizing current density is adjusted to 0.5mA/cm² (for anodization at a constant current). Next, an anodization iscarried out till an anodization current of 125 V necessary for apredetermined A1 ₂ 0 ₃ film thickness is reached. After this, thesubstrate SUB1 is desirably held in this state for several ten minutes(for anodization at a constant voltage). This is important for achievinga uniform A1 ₂ 0 ₃ film. Thus, the conductive film g2 is anodized toform an anodized film AOF having a thickness of 1,800 angstroms over thescanning signal line GL, the gate electrode GT and the electrode PL1.

[0145] Step D, FIG. 14

[0146] Ammonia gas, silane gas and nitrogen gas are introduced into aplasma CVD apparatus to form a Si nitride film having a thickness of2,000 angstroms, and silane gas and hydrogen gas are introduced into theplasma CVD apparatus to form an i-type amorphous Si film having athickness of 2,000 angstroms. After this, hydrogen gas and phosphine gasare introduced into the plasma CVD apparatus to form an N(+)-typeamorphous Si film having a thickness of 300 angstroms.

[0147] Step E, FIG. 14

[0148] After the photolithography, the N(+)-type amorphous Si film andthe i-type amorphous Si film are selectively etched by the photoetchingusing SF₆ and CCl₄ as the dry etching gas to form an island of an i-typesemiconductor layer AS.

[0149] Step F, FIG. 14

[0150] After the photolithography, the Si nitride film is selectivelyetched by using SF₆ as the dry etching gas.

[0151] Step G, FIG. 15

[0152] A first conductive film d1 formed of an ITO film having athickness of 1,400 angstroms is formed by the sputtering. After thephotolithography, the first conductive film d1 is selectively etched byusing a mixed acid solution of hydrochloric acid and nitric acid as theetching solution, to form the uppermost layer of the gate electrode GTMand the drain terminal DTM and the transparent pixel electrode ITO1.

[0153] Step H, FIG. 15

[0154] A second conductive film d2 of Cr having a thickness of 600angstroms is formed by the sputtering, and a third conductive film d3 ofAl—Pd, Al—Si, Al—Si—Ti or Al—Si—Cu having a thickness of 4,000 angstromsis formed by the sputtering. After the photolithography, the thirdconductive film d3 is etched by a solution similar to that of Step B,and the second conductive film d2 is etched by a solution similar tothat of Step A, to form the video signal line DL, the source electrodeSD1 and the drain electrode SD2. Next, CCl₄ and SF₆ are introduced intoa dry etching apparatus to etch the N(+)-type amorphous Si film therebyto remove the N(+)-type semiconductor layer d0 selectively from betweenthe source and the drain.

[0155] Step I, FIG. 15

[0156] Ammonia gas, silane gas and nitrogen gas are introduced into aplasma CVD apparatus to form a Si nitride film having a thickness of 1micron. After the photolithography, the Si nitride film is selected bythe photoetching technique using SF₆ as the dry etching gas, to form thepassivation film PSV1.

[0157] <<Structure of Whole Liquid Crystal Display Module>>

[0158]FIG. 23 is an exploded perspective view showing a liquid crystaldisplay module MDL, and the specific construction of the individualcomponents is shown in FIGS. 24 to 39.

[0159] Letters SHD designate a shield casing (=metal frame) made of ametal plate; letters LCW designate a liquid crystal display window;letters PNL designate a liquid crystal display panel; letters SPBdesignate an optical diffusion plate; letters MFR designate a middleframe; letters BL designate back lights; letters BLS designate a backlight support; and letters LCA designate a lower casing. All of thesemembers are stacked in vertical positions, as shown, to assemble amodule MDL.

[0160] The module MDL is constructed of three kinds of holding members:the lower casing LCA, the middle frame MFR, and the shield casing SHD.These three members are individually formed generally into boa shapesand are stacked in the recited order to hold the remaining two membersmounting the individual parts by the shield casing SHD. The displaypanel PNL and the optical diffusion board SPB can be once placed on themiddle frame MFR, and the back light support BLS supporting the fourback lights (or cold-cathode fluorescent lamps) can be once placed onthe lower casing LCA. As a result, the two members, i.e., the lowercasing LCA and the middle frame MFR can be stacked without anyupside-down while packaging the necessary parts, so that the manufacturecan be facilitated to provide a device having an excellent assembly anda high reliability. This advantage is one of the major features of thepresent module.

[0161] The individual members will be described in more detail in thefollowing.

[0162] <<Shield Casing SHD>>

[0163]FIG. 24 presents the upper side, front side, rear side, righthandside and lefthand side of the shield casing SHD, and FIG. 25 is aperspective view showing the shield casing SHD obliquely downward.

[0164] The shield casing (or metal frame) SHD is fabricated by punchingor folding a metal sheet by the pressing technique. Letters LCWdesignate a window for exposing the display panel PNL to the field ofview, as will be called the “display window”.

[0165] Letters CL designate (totally nineteen) fixing pawls for themiddle frame MFR, and letters FK designate (totally nine) fixing hooksfor the lower casing LCA. These pawls and hooks are integrated with theshield casing SHD. The fixing pawls CL in the shown state areindividually folded inward, at the assembly, and inserted into thesquare fixing pawl holes CLH (as shown in the individual side views ofFIG. 27) formed in the middle frame MFR. As a result, the shield casingSHD holds the middle frame MFR for holding/implementing the displaypanel PNL and so on so that they are firmly fixed. The fixing hooks FKare individually fitted in fixing projections FKP (as shown at theindividual side views of FIG. 34), which are formed on the lower casingLCA. As a result, the shield casing SHD holds the lower casing LCA, inwhich the back lights BL and the back light support BLS are held andimplemented, so that they are firmly fixed together. Incidentally, themiddle frame MFR and the lower casing LCA are fitted at their peripheraledges, and the shield casing SHD is fitted to cover the middle frameMFR, so that these three members are integrated. Moreover, the displaypanel PNL is equipped on its upper and lower faces with a thin rubberspacer (or rubber cushion, although not shown) having an elongatedrectangular shape on its four side edges exerting no influence upon thedisplay. The upper side rubber spacer is sandwiched between the displaypanel PNL and the shield casing SHD, and the lower rubber spacer issandwiched between the display panel PNL and the middle frame MFR andthe optical diffusion plate SPB. By pushing the shield casing SHD intothe device by making use of the elasticity of those rubber spacers, thefixing hooks FK are caught by the fixing projections FKP so that the twofixing members function as stoppers. Moreover, the fixing pawls CL arefolded and inserted into the pawl holes CLH, and the middle frame MFRand the lower casing LCA are fixed by the shield casing SHD so that thewhole module is firmly held in its entirety without any necessity forother fixing members. As a result, the assembly can be facilitated todrop the fabrication cost. Moreover, the mechanical strength can beincreased to improve the resistance to vibrations and the reliability ofthe device. Since, moreover, the fixing pawls CL and the fixing hooks FKcan be easily removed (merely by folding back the fixing pawls CL andremoving the fixing hooks FK), the three members can be easilydisassembled and assembled with easy repair and replacement of the backlights BL (Here, the fixing hooks FK of the lower casing LCA to be morefrequently removed for the back light replacement are made more easilyremovable). Here, in the present module, the lower casing LCA and themiddle frame MFR are fixed not only by the aforementioned fixing membersbut also by fastening the screws into four through screw holes LHL (asshown in FIGS. 34 to 36) formed in the lower casing LCA and four screwholes MVH (as shown in FIG. 28) of the middle frame MFR.

[0166] Letters COH designate common through holes. Two common throughholes COH are commonly formed not only in the shield casing SHD but alsoa drive circuit substrate PCB1 of the display panel PNL, a drive circuitsubstrate PCB2 of the middle frame MFR, in the midddle frame MFR and inthe lower casing LCA. The relative positions of the individual membersand parts are precisely set by implementing them such that theindividual common through holes COH are inserted at the fabrication timesequentially from the lower casing LCA onto the pins which are anchoredin positions. Moreover, the common through holes COH can be used as thepositioning references when the module MDL is to be packaged in anapplication product such as the personal computer.

[0167] In the prior art, on the other hand, there is a problem thatundesirable radiation electric waves for causing the EMI (i.e., ElectroMagnetic Interference) are emitted from the liquid crystal displaydevice.

[0168] In the present invention, at least one of the divided circuitsubstrates is equipped with a frame ground pad, and this frame groundpad is connected with a projection which is formed integral with themetallic shield casing. As a result, the ground line in thehigh-frequency range can be strengthened to suppress the establishmentof the undesired radiation electric waves. Specifically, as shown inFIG. 24, letters FG designate six frame grounds which are integratedwith the metallic shield casing SHD. The frame grounds FG are formed ofthe “U-shaped” openings in the shield casing SHD, namely, elongatedprojections extending in the square openings. These thin projections areindividually folded inward the device and are connected by solder withthe frame ground pads FGP (as shown in FIG. 26), which in turn areconnected with the ground lines of the drive circuit substrate PCB1 ofthe display panel PNL.

[0169] <<Display Panel PNL and Drive Circuit Substrate PCB1>>

[0170]FIG. 26 is a top plan view showing the state in which the drivecircuit is implemented in the display panel PNL shown in FIGS. 16 and soon.

[0171] Letters CHI designate drive IC chips (of which: the lower threeare the drive IC chips at the vertical scanning circuit side whereas therighthand and lefthand six are the drive IC chips at the video signaldrive circuit side) for driving the display panel PNL. Letters TCPdesignate tape carrier packages in which are packaged the driving ICchips CHI by the tape automated bonding method (TAB), as has beendescribed with reference to FIGS. 21 and 22, and letters PCB1 designatedrive circuit substrates divided into three and made of PCB (i.e.,Printed Circuit Boards) in which are individually implemented the tapecarrier packages TCP and capacitors CDS. Letters FGP designate frameground pads. Letters FC designate flat cables for connecting the lowerside drive circuit substrate PCB1 and the lefthand side drive circuitsubstrate PCB1, and the lower side drive circuit substrate PCB1 and therighthand side drive circuit substrate PCB1 electrically. The flatcables FC to be used are prepared by sandwiching and supporting, asshown, a plurality of lead lines (made of phosphor bronze plated withSn) between the striped polyethylene layer and polyvinyl alcohol layer.

[0172] <<Drive Circuit Substrate PCB1>>

[0173] The drive circuit substrate PCB1 is divided, as shown in FIG. 26,into three, which are arranged in a shape of letter “U” around thedisplay panel PNL and individually connected electrically andmechanically through the two flat cables FC. Since the drive circuitsubstrate PCB1 is divided, the stress, which is established in thelongitudinal direction of the drive circuit substrate PCB1 due to thedifference in the coefficients of thermal expansion between the displaypanel PNL and the drive circuit substrate PCB1, can be absorbed at theflag cables FC to prevent any peel of the output leads (e.g., TTM ofFIGS. 21 and 22) of the tape of the take carrier package TCP having aweak connection strength and the external connection terminal DTM (orGTM) of the display panel, thereby to improve the reliability of themodule against the heat. According to this substrate dividing method,moreover, the single substrate material can be divided into a number ofsheets of substrate PCB1 because of their simple shape so that the usingefficiency of the print substrate material is better than that of thesingle “U-shaped” substrate. Thus, there can be achieved an effect toreduce the costs for the parts and materials (to about 50% in case ofthe present embodiment. Incidentally, the drive circuit substrate PCB1can enhance the lead peel preventing effect better if it is made of asoft FPC (i.e., Flexible Printed Circuit) in place of the PCB, becausethe FPC is flexible. Moreover, an undivided integral “U-shaped” PCBcould be used. If this case, there can be achieved an effect ofenhancing the reliability by reducing the step number, by simplifyingthe control of the fabrication process due to the reduction of the partnumber, and by eliminating the connection cable between the PCBs.

[0174] The frame ground pads FGP, which are connected with each groundline of each of the three divided drive circuit substrates PCB1, areprovided totally in six because they are two for each substrate, asshown in FIG. 26. In case the drive circuit substrate PCB1 is dividedinto plurality, no electric problem will arise if at least one of thedivisions of the drive circuit substrate is connected in respect of theDC current with the frame ground. If the number of divisions is small inthe high-frequency range, a potential for generating the undesiredradiation electric waves for causing the EMI (i.e., Electro MagneticInterference) will be increased by the reflection of electric signalsand the deflection of the potential of the ground lines due to thedifference in the characteristic impedance between the dividedindividual drive circuit substrates. Especially, the module MDL usingthe thin film transistors finds it difficult to counter-measure the EMIbecause it uses a high-speed clock. In order to prevent the EMI, theground line (at the AC ground potential) is connected in at least oneportion, e.g., two portions in the present embodiment for each of theplurality of divided drive circuit substrates PCB1 with a common frame(i.e., the shield casing SHD) having a sufficiently low impedance. As aresult, the ground line is strengthened in the high-frequency range, animprovement of 5 dB or more in terms of the field intensity of theradiation can be observed in case of the six connected portions of thepresent embodiment, as compared with the case in which totally oneportion is connected with the shield casing SHD.

[0175] The frame grounds FG of the shield casing SHD are made of thinmetal projections so that they can be easily connected with the frameground pads FGP of the display panel PNL by folding them, thus requiringno special wire (or lead) for the connections. Moreover, the shieldcasing SHD and the drive circuit substrate PCB1 can also be mechanicallyconnected through the frame grounds FG, to improve the mechanicalstrength of the drive circuit substrate PCBI.

[0176] <<Middle Frame MFR>>

[0177]FIG. 27 presents the upper side, front side, rear side, righthandside and lefthand side of the middle frame MFR; FIG. 28 presents abottom side of the middle frame; and FIG. 29 is a perspective view takenfrom the top side of the middle frame MFR.

[0178] The middle frame MFR is a member for holding the liquid crystaldisplay LCD, the optical diffusion board and the L-shaped drive circuitsubstrate PCB2, which are integrated with the drive circuit substratePCB1.

[0179] Letters BLW designate a back light window for introducing thelight of the back lights BL into the liquid crystal display LCD and forplacing/holding the optical diffusion board SPB. Letters SPBS designatea portion for holding the optical diffusion board SPB. Letters RDWdesignate radiation holes, and letters CW designate notches forconnectors to be connected with the outside. Letters MVH designate fourscrew holes for fixing the lower casing LCA and the middle frame MFRtherethrough and through the through holes LHL (as shown in FIGS. 34 to36) of the lower casing LCA by means of not-shown screws. Letters CLHdesignate fixing holes (as shown in the individual side views of FIG. 27and in FIG. 29), into which are inserted the fixing pawls CL of theshield casing SHD. Letters 2HL designate fixing holes of the drivecircuit substrate PCB2 (as shown in FIG. 30), into which are insertedfixing members such as nylon rivets. The L-shaped drive circuitsubstrate PCB2 is arranged in the L-shaped region of the righthand andlower edges of the top plan view of the middle frame MFR of FIG. 27.Incidentally, the middle frame MFR is made of a synthetic resin in thesame white color as that of the back light support BLS and the lowercasing LCA. Moreover, since the middle frame MFR is made of thesynthetic resin, it is advantageous in the insulations of the drivecircuit substrate PCB1 and the drive circuit substrate PCB2.

[0180] <<Optical Diffusion Plate SPB>>

[0181] The optical Diffusion board SPB (as shown in FIG. 23) is held onthe holding portion SPBS (which is lower than the upper face of themiddle frame MFR, as shown in FIGS. 27 and 29) which is provided on thefour peripheral edge portions of the back light window BLW of the middleframe MFR. If the optical diffusion board SPB is placed on the holdingportion SPBS, the optical diffusion board SPB and the middle frame MFRhave their upper faces located in a common plane. On the opticaldiffusion board SPB, there is placed the liquid crystal display LCDwhich is integrated with the drive circuit substrate PCB1. Between theliquid crystal display LCD and the optical diffusion board SPB, there issandwiched the four rubber spacers (although not shown but should bereferred to the column of <<Shield Casing SHD>>), which are arranged onthe four peripheral edges of the lower side of the liquid crystaldisplay LCD, to seal up the liquid crystal display LCD and the opticaldiffusion board SPB. Specifically, the optical diffusion board SPB isplaced on the middle frame MFR (or frame) whereas the optical diffusionboard SPB has its upper face covered with the liquid crystal displayLCD, so that the liquid crystal display LCD and the optical diffusionboard SPB have their gap sealed up completely with the rubber spacers(that is, the optical diffusion board SPB and the liquid crystal displayLCD are integrated and fixed independently of the back light portion bymeans of the middle frame MFR). This construction can suppress theproblems that a foreign substance may invade into the gap between theliquid crystal display LCD and the optical diffusion plate SPB, and thata foreign substance caught electrostatically by a portion other than thedisplay region may move to the display region to drop the displayquality. Incidentally, the optical diffusion board SPB is so thickerthan the optical diffusion sheet as to prevent the foreign substancefrom being outstanding at the lower side of the optical diffusion boardSPB. Moreover, the foreign substance present at the lower side of theoptical diffusion board SPB is so far from the liquid crystal displayLCD as to become reluctant to be focused. The image is diffused to raiseno problem. Still moreover, the construction is excellent because theoptical diffusion board SPB and the liquid crystal display LCD aresequentially held on the middle frame MFR.

[0182] <<Drive Circuit Substrate PCB2>>

[0183]FIG. 30 presents the lower side of the drive circuit substratePCB2. The drive circuit substrate PCB2 of the liquid crystal display LCDto be held and mounted in the middle frame MFR is formed into anL-shape, as shown in FIG. 30, to implement electronic parts such as ICs,capacitors or resistors. In this drive circuit substrate PCB2, there aremounted a power supply circuit for achieving a plurality of dividedstable voltage sources from one voltage source and a circuit including acircuit for converting data for CRT (i.e., Cathode Ray Tube) from a host(i.e., a higher-order operational processor) to data for the TFT liquidcrystal display device. Letters CJ designate a connector connectionportion to be connected with a not-shown connector to be connected withthe outside. Incidentally, the drive circuit substrate PCB2 and thedrive circuit substrate PCB1 are electrically connected, as shown inFIG. 31, by the flat cable FC (as will be described in detailhereinafter). Moreover, the drive circuit substrate PCB2 and theinverter circuit substrate IPCB are electrically connected through theconnector holes CHL (as shown in FIGS. 27 to 29), which are formed inthe middle frame MFR, by the not-shown back light connector and backlight cable which are connected with the back light connection portionBC2 of the drive circuit substrate PCB2 and the back light connectionportion BCI of the inverter circuit substrate IPCB.

[0184] <<Electric Connection between Drive Circuit Substrate-PCB1 andDrive Circuit Substrate PCB2>>

[0185]FIG. 31 presents the upper side showing the connection statebetween the drive circuit substrate PCB1 (whose upper side is seen) ofthe liquid crystal display LCD and the drive circuit substrate PCB2(whose lower side is seen) of the middle frame MFR.

[0186] The liquid crystal display LCD and the drive circuit substratePCB2 are electrically connected through the foldable flat cables FC. Inthis state, the operation check can be accomplished. The drive circuitsubstrate PCB2 is arranged over the lower side of the liquid crystaldisplay LCD by bending the flat cables FC by 180 degrees and is fittedin a predetermined recess of the middle frame MFR until it is fixed byfixtures such as nylon rivets. On the drive circuit substrate PCB2,there is placed and held the drive circuit substrate PCB1 which isintegrated with the liquid crystal display LCD.

[0187] <<Back Light Support BLS>>

[0188]FIG. 32 presents the upper side, rear side, righthand side andlefthand side of the back light support BLS, and FIG. 33 is aperspective view showing the back light support BLS from its upper side.

[0189] The back light support BLS supports the four back lights (i.e.,cold-cathode fluorescent lamps) BL (as shown in FIGS. 37 and 23).Letters SPC designate a hole (or space), and the back light support BLSforms a frame.

[0190] The back light support BLS supports the four back lights BLthrough white silicone rubbers SG (as shown in FIGS. 37 and 39). LettersSS designate a back light support for supporting the two ends of eachback light BL through the silicone rubbers SG. Incidentally, thesilicone rubbers SG function to prevent any foreign substance fromstealing into the lighting regions of the back lights BL. Letters RHdesignate lead holes through which are guided leads LD (as shown in FIG.37) connected with the two ends of the back lights BL.

[0191] Letters SHL designate four through holes formed in the back lightsupport BLS. These through holes SHL are aligned with the screw holesLVH of the lower casing LCA and are fixed in the lower casing LCA bymeans of not-shown screws.

[0192] Letters SRM designate back light reflectors which are formed onthe righthand and lefthand inner sides of the back light support BLS ofFIG. 32 for reflecting the back lights BL (i.e., the outer two BL of thefour back lights BL). Like the upper sides of the back light reflectorsRM (as shown in FIGS. 34 and 36), the back light reflectors SRM areconstructed of a combination of a plurality of planes for reflecting thelights of the back lights BL efficiently toward the liquid crystaldisplay LCD (as should be referred to the description of <<LowerCasing>>). Incidentally, the back light support BLS is molded of asynthetic resin in the same white color as that of the middle frame MFRand the lower casing LCA.

[0193] According to the embodiment of the present invention, moreover,the back light support for supporting the back lights are providedseparately of the casings of the back lights the leads of the backlights can be soldered to the inverter circuit substrate while beingsupported by the back light supports, before the back lights are fixedin its casing. Thus, the working efficiency Is excellent, and thereplacement of defective parts is easy.

[0194] <<Lower Casing LCA>>

[0195]FIG. 34 presents the upper side (or reflecting side), rear side,righthand side and lefthand side of the lower casing LCA; FIG. 35presents the lower side of the lower casing LCA; FIG. 36 is aperspective view showing the lower casing LCA from its upper side; andFIG. 38 is a section (taken along line 38-38 of FIG. 34) showing thelower casing LCA.

[0196] The lower casing LCA is a holding member (or back light mountingcasing) for the back lights BL, the back light support BLS, and aninverter circuit substrate IPCB for lighting the back lights BL. Thelower casing LCA acts as the reflectors for the back lights BL and isintegrally molded of a synthetic resin in white or a color capable ofreflecting the lights of the back lights BL the most efficiently. Thelower casing LCA is formed on its upper face with three back lightreflectors RM which are made integral with the lower casing LCA toprovide the reflecting faces of the back lights BL. The three back lightreflectors RM are composed of a combination of a plurality of planes forreflecting the lights of the back lights BL efficiently toward theliquid crystal display LCD. Specifically, the back light reflectors RMhave sections contoured by straight lines which are approximated fromcurves computed to reflect the lights of the back lights BL the mostefficiently. Incidentally, the back light reflectors RM are higher thanthe upper faces of the back lights BL so as to increase thereflectivities (as shown in FIG. 39). Since the casing for and thereflectors of the back lights BL are thus constructed of the integralmember, the number of parts can be reduced to simplify the structure andto drop the fabrication cost. Thus, it is possible to improve thevibrational shock resistance and thermal shock resistance of the deviceand to improve the reliability of the device. Since the lower casing LCAis made of a synthetic resin, it is advantageous in the insulation ofthe inverter circuit substrate IPCB.

[0197] Incidentally, letters LVH designate four screw holes, and theback light support BLS is fixed in the lower casing LCA through thosescrew holes LVH and the through holes SHL (as shown in FIGS. 32 and 33)of the back light support BLS by means of the not-shown screws. LettersLHL designate four through holes, and the middle frame MFR and the lowercasing LCA are fixed through those through holes LHL and the screw holesMVH (as shown in FIG. 28) of the middle frame MFR by means of thenot-shown screws. Letters IHL designate fixing holes, into which areinserted fixing members such as nylon rivets for fixing the invertercircuit substrate IPCB; letters CW designate notches for the connectorsto be connected with the outside; and letters FKP designate fixingprojections (as shown at the individual sides of FIG. 34 and in FIG.36), in which are fitted fixing hooks FK of the shield casing SHD.

[0198] <<Back Lights BL>>

[0199]FIG. 37 presents the upper side, rear side, righthand side andlefthand side showing the state in which the back light support BLS, theback lights BL and the inverter circuit substrate IPCB are mounted inthe lower casing LCA, and FIG. 39 is a section taken along line 39-39 ofFIG. 37.

[0200] The back lights BL are of the below lights type, in which it isarranged just below the liquid crystal display LCD. The back lights BLare constructed of four cold-cathode fluorescent lamps and is supportedby the back light support BLS. The back lights BL are held in the lowercasing LCA or the back light mounting casing by fixing the back lightsupport BLS in the lower casing LCA through the through holes SHL of theback light support BLS and the screw holes LVH of the lower casing LCAby means of the not-shown screws.

[0201] Letters ECL designate the sealed side of the cold-cathode tube(at which a fluorescent substance is applied to the inner surface of thetube, or the tube is evacuated or filled with the gas). As shown in FIG.37, the four juxtaposed back lights BL are arranged such that theirsealed sides ECL are horizontally staggered (or vertically staggered asin FIG. 37). As a result, the transverse gradations of the colortemperatures (which are higher at the sealed sides) on the displayframe, which are caused as a result of applying the fluorescentsubstance to the fluorescent lamps, can be made less outstanding toimprove the display quality.

[0202] <<Inverter Circuit Substrate IPCB>>

[0203] The inverter circuit IPCB is a circuit substrate for lighting thefour back lights BL is placed in the lower casing LCA, as shown in FIG.37, and fixed through the fixing holes IHL (as shown in FIGS. 34 to 36)of the lower casing LCA by means of the not-shown fixing members such asnylon rivets. On the inverter circuit IPCB, there are mounted twotransformers TF1 and TF2 and electronic parts such as capacitors, coilsor resistors. Incidentally, the inverter circuit substrate IPCB actingas a heat source is arranged in the upper portion (as shown at thelefthand side of the upper side of FIG. 37) of the device so that it hasan excellent heat dissipation. Moreover, the inverter circuit substrateIPCB is arranged in the upper side of the device, whereas the L-shapeddrive circuit substrate PCB2 is arranged in the lower and lefthand side(i.e., in the L-shaped region of the righthand and lower edges of themiddle frame MFR, as viewed in FIG. 27) of the device. Thus, theinverter circuit substrate IPCB and the drive circuit substrate PCB2acting as the heat sources are so arranged as not to overlap each otherin view of the heat dissipation and the small thickness of the totalthickness of the module.

[0204] <<Back Lights BL, Back Light Support BLS and Inverter CircuitSubstrate IPCB>>

[0205] After the four back lights BL each having leads LD (as shown inFIG. 37) at its two ends have been fitted in the back light support BLS,(before the back light support BLS and the inverter circuit substrateIPCB are mounted and fixed in the lower casing LCA), the leads LD ofeach back light BL are soldered to the inverter circuit substrate IPCB.As a result, the back lights BL, the back light support BLS and theinverter circuit substrate IPCB constitute together one unit (as shownin FIGS. 23 and 37). In this state, the lighting tests of the backlights BL can be accomplished. In the prior art, the leads of the backlights are soldered to the inverter circuit substrate after the backlights and the inverter circuit substrate have been individually fixedin the back light mounting casing. The space for the soldering operationis so limited that its working efficiency is insufficient. In thepresent module, the leads LD of the back lights BL can be soldered tothe inverter circuit substrate IPCB with the back lights BL beingsupported by the back light support BLS, before the back lights BL andthe inverter circuit substrate IPCB are fixed in the lower casing LCA.Thus, the working efficiency is excellent. Moreover, defective parts, ifany, can be easily replaced by new ones. After the lighting tests havebeen ended, the inverter circuit substrate IPCB is fitted through thefixing holes IHL of the lower casing LCA by using the fixing memberssuch as nylon rivets, as shown in FIG. 37, and the back light supportBLS is fixed in the lower casing LCA through the four through holes SHLand screw holes LVH (as shown in FIGS. 36 and 34) by means of thenot-shown screws.

[0206] In the prior art, moreover, the construction is made to use sixcold-cathode tubes and two inverter circuit substrates to light threecold-cathode tubes for each inverter circuit substrate (having twotransformers), and the two inverter circuit substrates are arranged atboth the upper and lower sides (or at the righthand and lefthand sidesof the upper side of the lower casing LCA, as viewed in FIG. 37) of theback lights in the back light casing. As a result, the total size of theback light portion is enlarged. Since the two inverter circuitsubstrates acting as heat sources are arranged vertically at the twosides, a problem arises in the heat dissipation. In the present device,however, the use of a single inverter circuit substrate IPCB can reducethe total size of the back light portion and can provide an excellentheat dissipation. In the present device, moreover, the inverter circuitsubstrate TPCB is arranged in the upper side (as shown at the lefthandside of the upper side of FIG. 37) of the device, an excellent heatdissipation can be achieved.

[0207] As has been described hereinbefore, according to the embodimentsof the present invention, the fixing pawls and fixing hooks of theshield casing can be easily removed, and the shield casing, the middleframe for holding the liquid crystal display and the lower casing formounting the back lights can be easily disassembled and assembled sothat the repair and the replacement of the back lights can be easilyaccomplished.

What is claimed is:
 1. A liquid crystal display device comprising: aliquid crystal display panel; and a metal shield casing covering aperiphery of the liquid crystal display panel; wherein the metal shieldcasing has a plurality of fixing pawls and a plurality of fixing hooks.2. A liquid crystal display device comprising: a liquid crystal displaydevice; a metal shield casing covering a periphery of the liquid crystaldisplay panel, and having a plurality of fixing hooks; and a lowercasing having a plurality of fixing projections; wherein the metalshield casing covers at least one side of the lower casing, and theplurality of fixing hooks are fitted in the plurality of fixingprojections.
 3. A liquid crystal display device comprising: a liquidcrystal display panel; a back light; a metal shield casing covering aperiphery of the liquid crystal display panel, and having a plurality offixing pawls; and a frame holding the liquid crystal display panel, andhaving a plurality of fixing areas; wherein the plurality of fixingpawls are inserted into the plurality of fixing areas.
 4. A liquidcrystal display device comprising: a liquid crystal display panel; aback light; a metal shield casing covering a periphery of the liquidcrystal display panel, and having a plurality of fixing hooks; andholding members holding the liquid crystal display panel and the backlight, and having a plurality of fixing projections; wherein the metalshield casing covers at least one side of the holding members, and theplurality of fixing hooks are fitted in the plurality of fixingprojections.
 5. A liquid crystal display device comprising: a liquidcrystal display panel; a back light; a metal shield casing covering aperiphery of the liquid crystal display panel, and having a plurality offixing pawls; and holding members holding the liquid crystal displaypanel and the back light, and having a plurality of fixing areas;wherein the plurality of fixing pawls are inserted into the plurality offixing areas.
 6. A liquid crystal display device comprising: a liquidcrystal display panel; a back light; a metal shield casing covering aperiphery of the liquid crystal display panel, and having a plurality offixing hooks and a plurality of fixing pawls; and holding membersholding the liquid crystal display panel and the back light, and havinga plurality of fixing projections and a plurality of fixing areas;wherein the plurality of fixing hooks are fitted in the plurality offixing projections, and the plurality of fixing pawls are inserted intothe plurality of fixing areas.